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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13002/ 3DD13002B FEATURE Power dissipation PCM: Collector current ICM: 900 TRANSISTOR (NPN) TO-92 1. EMITTER mW (Tamb=25) 2. COLLECTOR 3. BASE 3DD13002: 1A 3DD13002B: 0.8 A Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 123 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Fall time Storage time VCE(sat) VBE(sat) fT tf ts unless otherwise specified) Test conditions MIN 600 400 6 100 100 9 6 0.5 1.1 5 0.5 2.5 V V MHz s s 40 TYP MAX UNIT V V V A A Ic=100A, IE=0 Ic= 1mA, IB=0 IE= 100A, IC=0 VCB= 600V, IE=0 VEB= 6V, IC=0 VCE= 10V, IC= 200 mA VCE= 10V, IC= 10 mA IC=200mA, IB= 40 mA IC=200mA, IB=40 mA VCE=10V, Ic=100mA f =1MHz IC=1A, IB1=-IB2=0.2A VCC=100V CLASSIFICATION OF hFE(1) Range 9-15 15-20 20-25 25-30 30-35 35-40 |
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